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SiC Crystal Crucibles - OEM Graphite Machining Manufacturer Logo
SiC Crystal Crucibles
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SiC Crystal Crucibles - OEM Graphite Machining Manufacturer Logo
SiC Crystal Crucibles

China-based custom graphite manufacturer supporting precision machining, RFQ-defined ash targets, and export delivery planning.

Inquiry Email

[email protected]

Email app

Attach DWG, STEP, or PDF drawings and include purity, tolerance, quantity forecast, and delivery country.

Instant Chat

+8618857971991

Chat on WhatsApp

Use WhatsApp for quick engineering clarification before a formal quote.

Factory Addr:Liaoyang, Liaoning, China (Xingde Graphite manufacturing partner)

Email:[email protected]

WhatsApp:+86 18857971991

Products & Consumables
  • SiC Crystal Growth Crucible
  • TaC Coated Crucible
  • High-Purity Graphite Crucible
  • Isostatic Graphite Crucible
  • SiC PVT Crucible
  • Porous Graphite (TaC)
  • Graphite Susceptor
  • MOCVD Wafer Carrier
  • Graphite Heater
  • Graphite Hot Zone
  • PAN Carbon Felt
  • Graphite Felt Insulation
  • Rigid Carbon Felt Board
  • Graphite Crucible Lid & Cover
  • CVD-SiC Coated Susceptor
  • Semiconductor Graphite Machining
Solutions & Applications
  • SiC PVT Crystal Growth
  • SiC Wafer Manufacturing
  • Vacuum Furnace Hot Zone
  • Crystal Growth Laboratory
  • High-Temperature Furnace Consumables
OEM Capabilities
  • High-Temp Purification
  • CVD Coating Service
  • Precision Machining
  • Ash PPM & Impurity Control
  • Drawing-Based Graphite Parts
  • Inspection & Packaging
Resources
  • Insights
  • About Factory
  • Request a Quote
  • Privacy Policy
  • Terms of Service
© 2026 SiC Crystal Crucibles. All Rights Reserved.|Manufacturing support coordinated with Liaoyang Xingde Graphite for high-purity isostatic graphite machining and purification.
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MOCVD Susceptor & Wafer Carrier

CVD-SiC coated graphite susceptors and wafer carriers for SiC epitaxy, GaN-on-Si MOCVD, LED, and compound semiconductor processing.

Target Buyer:Epitaxy process engineers, equipment maintenance teams, and procurement groups replacing coated graphite wafer carriers by drawing.
Mocvd Susceptor Wafer Carrier - High Purity OEM Graphite Component

Capability Highlights

  • Custom wafer pockets, pins, grooves, and rotation interfaces
  • CVD-SiC coating route for corrosive epitaxy gas environments
  • Barrel, pancake, single-wafer, and carrier-style geometries reviewed
  • Compatible with major reactor platforms: Aixtron, Veeco, LPE, AMEC, and custom systems

Typical Applications

  • SiC homoepitaxy and wafer support
  • GaN heteroepitaxy and LED MOCVD processes
  • Replacement susceptors for Aixtron G5/G10, Veeco TurboDisc, LPE PE-106, and AMEC Prismo reactors

Engineering Focus

  • Wafer pocket flatness, edge support, and thermal uniformity
  • Coating thickness, pinhole risk, and cleaning compatibility
  • Equipment interface, rotation balance, and gas-flow exposure

Key Evaluation Matrix

MetricTypical RangeWhy It Matters
Coating SelectionCVD SiC or TaC by process chemistryCoating choice affects chemical resistance, particle behavior, and wafer contamination risk.
Pocket GeometryDefined by wafer size and equipment interfacePocket flatness and edge support influence thermal uniformity and wafer handling repeatability.

RFQ Checklist

  1. Equipment model or chamber interface drawing
  2. Wafer size, pocket count, pocket depth, and flatness requirements
  3. Base graphite grade, coating material, and coating thickness target
  4. Process gases, cleaning chemistry, and maximum operating temperature
  5. Inspection criteria, sample quantity, annual forecast, and destination

Risk Controls

  • Coating pinholes: Define coating route, inspection expectations, cleaning method, and acceptance criteria before sample validation.
  • Wafer seating variation: Confirm pocket geometry, support points, flatness, and carrier balance against the equipment drawing.

RFQ Pricing, Shipping, and Returns

  • Pricing: Custom B2B quotes are prepared after drawings, material grade, coating scope, quantity, packing, and delivery plan are confirmed.
  • Shipping: Export packing, Incoterms, freight method, insurance, and delivery window are quoted per RFQ and destination.
  • Returns: Made-to-drawing graphite components do not use standard consumer returns; quality claims follow the approved quotation, contract, and inspection records.

Product Gallery

Mocvd Susceptor Wafer Carrier - High Purity OEM Graphite Component
Mocvd Susceptor Wafer Carrier - High Purity OEM Graphite Component
Mocvd Susceptor Wafer Carrier - High Purity OEM Graphite Component
Mocvd Susceptor Wafer Carrier - High Purity OEM Graphite Component
Mocvd Susceptor Wafer Carrier - High Purity OEM Graphite Component
Mocvd Susceptor Wafer Carrier - High Purity OEM Graphite Component

Decision fit

Who should evaluate this

Epitaxy process engineers, equipment maintenance teams, and procurement groups replacing coated graphite wafer carriers by drawing.

Primary proof point

Coating Selection

CVD SiC or TaC by process chemistry

Coating choice affects chemical resistance, particle behavior, and wafer contamination risk.

RFQ trigger

Data needed first

  • Equipment model or chamber interface drawing
  • Wafer size, pocket count, pocket depth, and flatness requirements
  • Base graphite grade, coating material, and coating thickness target

Selection and Acceptance Logic

Decision GateWhat Buyers Should CheckAcceptance Evidence
Use-case fitSiC homoepitaxy and wafer support; GaN heteroepitaxy and LED MOCVD processes; Replacement susceptors for Aixtron G5/G10, Veeco TurboDisc, LPE PE-106, and AMEC Prismo reactorsApplication, furnace duty, and buyer-side validation goal are confirmed before material or process route selection.
Parameter baselineCoating Selection: CVD SiC or TaC by process chemistry; Pocket Geometry: Defined by wafer size and equipment interfaceTarget ranges, report needs, and pass/fail criteria are written into the RFQ or sample approval plan.
Risk closureCoating pinholes: Define coating route, inspection expectations, cleaning method, and acceptance criteria before sample validation.; Wafer seating variation: Confirm pocket geometry, support points, flatness, and carrier balance against the equipment drawing.Drawing notes, inspection scope, cleaning, coating, packaging, and traceability controls are agreed before repeat supply.
RFQ completenessEquipment model or chamber interface drawing; Wafer size, pocket count, pocket depth, and flatness requirements; Base graphite grade, coating material, and coating thickness target; Process gases, cleaning chemistry, and maximum operating temperatureEngineering can return a quote direction without avoidable loops for drawing, purity, coating, quantity, or delivery gaps.

Factory Execution Path

  1. 1

    Application and drawing review

    Confirm furnace duty, drawing revision, target purity, operating atmosphere, and replacement cycle before material selection.

  2. 2

    Material and process route

    Match isostatic graphite grade, purification depth, coating route, and machining allowance to the process risk.

  3. 3

    Precision manufacturing

    Machine graphite bodies, lids, rings, heaters, carriers, and insulation interfaces against the approved drawing pack.

  4. 4

    Inspection and export readiness

    Align dimensional checks, purity report format, cleaning, vacuum sealing, cushioning, and crate requirements before shipment.

Evidence Buyers Can Request

  • Graphite grade, density, and material batch confirmation
  • Ash, impurity, or coating report format aligned before sample approval
  • Critical OD, ID, thickness, thread, groove, and flatness checks
  • Cleaning, vacuum sealing, cushioning, and export crate plan for brittle graphite parts

Claim Boundaries

  • Ash limits, density windows, coating scope, and tolerance claims are confirmed by RFQ, material grade, geometry, and inspection method.
  • Service-life, equipment-fit, and semiconductor-process suitability should be validated in the buyer furnace before repeat production.
  • Certification or compliance documents are listed in the quotation package when available; they are not implied by catalog copy.

Next Internal Links

SiC PVT crystal growth solution

Review how crucibles, hot-zone parts, and insulation fit a PVT growth workflow.

Precision graphite machining

Check the factory workflow for drawing-based graphite part production.

Inspection and packaging

Align inspection reports, sealing, cushioning, and export crate expectations.

SiC Wafer Manufacturing

Open the related page to continue technical qualification.

CVD Coating Service

Open the related page to continue technical qualification.

Inquiry Email

[email protected]

Email app

Attach DWG, STEP, or PDF drawings and include purity, tolerance, quantity forecast, and delivery country.

Instant Chat

+8618857971991

Chat on WhatsApp

Use WhatsApp for quick engineering clarification before a formal quote.

Buyer FAQ

Can you customize for barrel reactors?

Yes, we manufacture barrel, pancake, and single-wafer susceptors.

Do you need the equipment model before quoting?

Yes. The equipment model or chamber interface drawing helps confirm wafer pocket geometry, mounting interface, rotation, coating surfaces, and inspection needs.