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SiC Crystal Crucibles
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SiC Crystal Crucibles - OEM Graphite Machining Manufacturer Logo
SiC Crystal Crucibles
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SiC Crystal Crucibles - OEM Graphite Machining Manufacturer Logo
SiC Crystal Crucibles

China-based custom graphite manufacturer supporting precision machining, RFQ-defined ash targets, and export delivery planning.

Inquiry Email

[email protected]

Email app

Attach DWG, STEP, or PDF drawings and include purity, tolerance, quantity forecast, and delivery country.

Instant Chat

+8618857971991

Chat on WhatsApp

Use WhatsApp for quick engineering clarification before a formal quote.

Factory Addr:Liaoyang, Liaoning, China (Xingde Graphite manufacturing partner)

Email:[email protected]

WhatsApp:+86 18857971991

Products & Consumables
  • SiC Crystal Growth Crucible
  • TaC Coated Crucible
  • High-Purity Graphite Crucible
  • Isostatic Graphite Crucible
  • SiC PVT Crucible
  • Porous Graphite (TaC)
  • Graphite Susceptor
  • MOCVD Wafer Carrier
  • Graphite Heater
  • Graphite Hot Zone
  • PAN Carbon Felt
  • Graphite Felt Insulation
  • Rigid Carbon Felt Board
  • Graphite Crucible Lid & Cover
  • CVD-SiC Coated Susceptor
  • Semiconductor Graphite Machining
Solutions & Applications
  • SiC PVT Crystal Growth
  • SiC Wafer Manufacturing
  • Vacuum Furnace Hot Zone
  • Crystal Growth Laboratory
  • High-Temperature Furnace Consumables
OEM Capabilities
  • High-Temp Purification
  • CVD Coating Service
  • Precision Machining
  • Ash PPM & Impurity Control
  • Drawing-Based Graphite Parts
  • Inspection & Packaging
Resources
  • Insights
  • About Factory
  • Request a Quote
  • Privacy Policy
  • Terms of Service
© 2026 SiC Crystal Crucibles. All Rights Reserved.|Manufacturing support coordinated with Liaoyang Xingde Graphite for high-purity isostatic graphite machining and purification.
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SiC Crystal Growth Crucible

High-purity isostatic graphite crucible bodies, lids, liners, sleeves, and holder interfaces tailored for SiC PVT sublimation growth.

Target Buyer:Semiconductor crystal growth laboratories, SiC wafer manufacturers, and PVT furnace operators qualifying repeatable crucible consumables.
Sic Crystal Growth Crucible for Semiconductor Crystal Growth

Capability Highlights

  • High-purity isostatic graphite route for PVT growth consumables
  • Crucible body, lid, liner, sleeve, ring, and seed-holder support
  • Purification, TaC coating, and inspection scope reviewed by drawing

Typical Applications

  • 6-inch and 8-inch SiC PVT boule growth
  • 4H-SiC and 6H-SiC sublimation growth furnaces
  • Replacement crucible sets for pilot lines and crystal growth labs

Engineering Focus

  • Ash, metal impurity, and outgassing control near the growth chamber
  • Lid fit, wall thickness, sleeve clearance, and seed-holder concentricity
  • Thermal-cycle stability, coating boundary, and replacement-cycle planning

Key Evaluation Matrix

MetricTypical RangeWhy It Matters
Ash Content< 10ppm; < 5ppm reviewed by applicationLower ash and controlled trace metals reduce contamination risk during high-temperature SiC sublimation growth.
Graphite DensityApprox. 1.80-1.90 g/cm3 by isostatic gradeDensity and pore structure affect strength, purification depth, thermal behavior, and machining stability.
Assembly GeometryDefined by drawing, furnace interface, and boule sizeBody, lid, sleeve, and seed-holder fit influence vapor containment, thermal symmetry, and repeatability.

RFQ Checklist

  1. 2D/3D drawings for crucible body, lid, liner, sleeve, and holder
  2. Boule size target, furnace type, operating temperature, and atmosphere
  3. Graphite grade, density window, ash limit, and impurity focus elements
  4. Critical OD, ID, wall thickness, thread, groove, and surface-finish tolerances
  5. Purification, coating, cleaning, packing, quantity, forecast, and timeline

Risk Controls

  • Crucible cracking during thermal cycling: Review wall thickness, corner radius, material grade, ramp assumptions, and support interfaces before sample machining.
  • Vapor leakage or poor lid fit: Confirm mating dimensions, groove design, tolerance stack-up, and thermal expansion clearance across the crucible set.
  • Contamination from graphite consumables: Align ash limit, impurity report format, purification route, and optional coating surface map before approval.

RFQ Pricing, Shipping, and Returns

  • Pricing: Custom B2B quotes are prepared after drawings, material grade, coating scope, quantity, packing, and delivery plan are confirmed.
  • Shipping: Export packing, Incoterms, freight method, insurance, and delivery window are quoted per RFQ and destination.
  • Returns: Made-to-drawing graphite components do not use standard consumer returns; quality claims follow the approved quotation, contract, and inspection records.

Product Gallery

Sic Crystal Growth Crucible for Semiconductor Crystal Growth
Sic Crystal Growth Crucible for Semiconductor Crystal Growth
Sic Crystal Growth Crucible for Semiconductor Crystal Growth
Sic Crystal Growth Crucible for Semiconductor Crystal Growth
Sic Crystal Growth Crucible for Semiconductor Crystal Growth
Sic Crystal Growth Crucible for Semiconductor Crystal Growth

Decision fit

Who should evaluate this

Semiconductor crystal growth laboratories, SiC wafer manufacturers, and PVT furnace operators qualifying repeatable crucible consumables.

Primary proof point

Ash Content

< 10ppm; < 5ppm reviewed by application

Lower ash and controlled trace metals reduce contamination risk during high-temperature SiC sublimation growth.

RFQ trigger

Data needed first

  • 2D/3D drawings for crucible body, lid, liner, sleeve, and holder
  • Boule size target, furnace type, operating temperature, and atmosphere
  • Graphite grade, density window, ash limit, and impurity focus elements

Selection and Acceptance Logic

Decision GateWhat Buyers Should CheckAcceptance Evidence
Use-case fit6-inch and 8-inch SiC PVT boule growth; 4H-SiC and 6H-SiC sublimation growth furnaces; Replacement crucible sets for pilot lines and crystal growth labsApplication, furnace duty, and buyer-side validation goal are confirmed before material or process route selection.
Parameter baselineAsh Content: < 10ppm; < 5ppm reviewed by application; Graphite Density: Approx. 1.80-1.90 g/cm3 by isostatic grade; Assembly Geometry: Defined by drawing, furnace interface, and boule sizeTarget ranges, report needs, and pass/fail criteria are written into the RFQ or sample approval plan.
Risk closureCrucible cracking during thermal cycling: Review wall thickness, corner radius, material grade, ramp assumptions, and support interfaces before sample machining.; Vapor leakage or poor lid fit: Confirm mating dimensions, groove design, tolerance stack-up, and thermal expansion clearance across the crucible set.Drawing notes, inspection scope, cleaning, coating, packaging, and traceability controls are agreed before repeat supply.
RFQ completeness2D/3D drawings for crucible body, lid, liner, sleeve, and holder; Boule size target, furnace type, operating temperature, and atmosphere; Graphite grade, density window, ash limit, and impurity focus elements; Critical OD, ID, wall thickness, thread, groove, and surface-finish tolerancesEngineering can return a quote direction without avoidable loops for drawing, purity, coating, quantity, or delivery gaps.

Factory Execution Path

  1. 1

    Application and drawing review

    Confirm furnace duty, drawing revision, target purity, operating atmosphere, and replacement cycle before material selection.

  2. 2

    Material and process route

    Match isostatic graphite grade, purification depth, coating route, and machining allowance to the process risk.

  3. 3

    Precision manufacturing

    Machine graphite bodies, lids, rings, heaters, carriers, and insulation interfaces against the approved drawing pack.

  4. 4

    Inspection and export readiness

    Align dimensional checks, purity report format, cleaning, vacuum sealing, cushioning, and crate requirements before shipment.

Evidence Buyers Can Request

  • Graphite grade, density, and material batch confirmation
  • Ash, impurity, or coating report format aligned before sample approval
  • Critical OD, ID, thickness, thread, groove, and flatness checks
  • Cleaning, vacuum sealing, cushioning, and export crate plan for brittle graphite parts

Claim Boundaries

  • Ash limits, density windows, coating scope, and tolerance claims are confirmed by RFQ, material grade, geometry, and inspection method.
  • Service-life, equipment-fit, and semiconductor-process suitability should be validated in the buyer furnace before repeat production.
  • Certification or compliance documents are listed in the quotation package when available; they are not implied by catalog copy.

Next Internal Links

SiC PVT crystal growth solution

Review how crucibles, hot-zone parts, and insulation fit a PVT growth workflow.

Precision graphite machining

Check the factory workflow for drawing-based graphite part production.

Inspection and packaging

Align inspection reports, sealing, cushioning, and export crate expectations.

SiC PVT Crucible

Open the related page to continue technical qualification.

High-Purity Graphite Purification

Open the related page to continue technical qualification.

Inquiry Email

[email protected]

Email app

Attach DWG, STEP, or PDF drawings and include purity, tolerance, quantity forecast, and delivery country.

Instant Chat

+8618857971991

Chat on WhatsApp

Use WhatsApp for quick engineering clarification before a formal quote.

Buyer FAQ

Do you supply complete SiC crystal growth crucible sets?

Yes. We can review body, lid, liner, sleeve, ring, and seed-holder drawings as one PVT crucible package.

When should TaC coating be considered?

TaC coating should be reviewed when the process needs stronger graphite isolation, lower particle risk, or longer service life in high-temperature PVT duty.

What causes the longest quote delay?

Missing mating dimensions, unclear ash or impurity targets, undefined coating boundaries, and absent annual forecast usually create the longest clarification loop.